Meeting Abstracts of the Physical Society of Japan
Online ISSN : 2189-0803
ISSN-L : 2189-0803
63.1.4
Session ID : 25pTD-1
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25pTD-1 Formation of atomically smooth SiO_2/Si(111) structure with low leakage current density by nitric acid oxidation method
Woo-Byoung KimTakeshi MatsumotoHikaru Kobayashi
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© 2008 The Physical Society of Japan
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