9aAS-3 表面ラシュバ効果(9aAS 領域9シンポジウム:金属吸着半導体表面の物理-この30年を振り返り、次の10年を展望する-,領域9(表面・界面,結晶成長))

有賀 哲也

doi:10.11316/jpsgaiyo.69.2.4.0_653_1

Meeting Abstracts of the Physical Society of Japan

Online ISSN : 2189-0803
ISSN-L : 2189-0803

69.2.4

Session ID : 9aAS-3

DOI https://doi.org/10.11316/jpsgaiyo.69.2.4.0_653_1

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9aAS-3 Surface Rashba effect(Physics of Metal-Adsorbed Semiconductor Surfaces-Looking back over the last 30 years and surveying the next 10 years prospects-)

Tetsuya Aruga

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