Dielectric Constants of Ge, Sn, and Isoelectronic Semiconductors

Abstract

Static dielectric constants of Ge, Sn, and isoelectronic semiconductors are calculated by using the full f-sum rule including all possible transitions of d band electrons. The d band effect on the dielectric constant is expressed by using a newly defined D factor different from the empirical D factor introduced by Van Vechten. The new D factor is directly expressed in terms of the average band gap, the energy of the d band, and the coupling oscillator strength between valence and d bands so that it has a well defined meaning in contrast to the empirical D factor. The calculated D values well reproduce the observed dielectric constant and the effective number of valence electrons which represents the excess deviation from the usual valence electron number.