Quantized Conductance of One-Dimensional Doped Mott Insulator

Abstract

Possible modification of the quantized conductance of a one-dimensional doped Mott insulator, where the Umklapp scattering plays an important role, is studied based on the method by Maslov, Stone and Ponomarenko. At T=0 and away from half-filling, the conductance is quantized as g=2e²/h and there is no renormalization by the Umklapp scattering process. At finite temperatures, however, the quantization is influenced by the gate voltage and temperature.