Pressure-Induced Dielectric Change from Relaxor to Antiferroelectric Behavior in Disordered Pb(In₁/2Nb₁/2)O₃

Abstract

The dielectric properties of Pb(In_1/2Nb_1/2)O₃ (abbreviated as PIN) single crystal were investigated under hydrostatic pressures up to 0.7, GPa. The ordered PIN was confirmed to be antiferroelectric by observation of clear P-E double hysteresis loops below the transition temperature. There is a striking pressure effect in the disordered PIN. The relaxor behavior becomes less notable with increasing pressure and disappears at 0.4, GPa. At pressures above 0.4, GPa, the normal phase transition without dielectric dispersion in the low frequency range takes place and with increasing pressure, the temperature T_m, indicating the maximum of the dielectric constant, ε _rm^′, increases at a rate of 150, K/GPa and the ε _rm^′ decreases. Such dielectric phenomena with pressure are similar to those observed in antiferroelectric PbZrO₃.