1998 Volume 67 Issue 2 Pages 513-518
The ground state binding energy of hydrogenic impurities in n-doped and undoped GaAs--AlxGa1-xAs quantum wells, under intense high-frequency polarized laser field is investigated. The calculation has been performed by means of a nonperturbative theory and variational approach which takes into account the “dressed” confinement barrier potential, the “dressed” Coulomb potential, and the screening effect due to the two-dimensional electron gas. We found that the impurity binding energy in a n-doped quantum well is dramatically reduced by both, the screening effect and the intense high-frequency laser field, thus leading, under certain circumstances, to a metal-insulator transition.
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