Current Modulation of Charge-Density-Wave Field-Effect
Transistors with NbSe₃ Channel

Abstract

Mechanisms of the current modulation due to the gate bias in charge-density-wave field-effect-transistors (CDW FETs) with a NbSe₃ channel were investigated. It was clarified that the CDW dislocations do not modulate the CDW current and that the current is modulated under the gate electrode. The current modulation in the high-temperature CDW phase of NbSe₃ also was observed, for the first time.