Abstract
We investigated pressure P effects on the in-plane resistivity of the Zn-substituted YBa2Cu3O7-δ (Y123) with the optimal carrier doping. The increasing rate of Tc with P is larger in the Zn-substituted Y123 than in the Zn-free Y123, which implies an intriguing reduction of the pair-breaking effect. We attribute the primary origin of this pair-breaking suppression to a weakening of the impurity potential scattering with P, which was demonstrated by a decrease in the residual resistivity due to the P-induced carrier doping and a consequent change in the scattering phase shift.
