Magnetic Properties and a Change of the Electrical Resistivity under Pressure in CePtGe₂

Abstract

We have succeeded in growing a single crystal of CePtGe₂ with the orthorhombic crystal structure by the Bi-flux method. In order to investigate the anisotropic properties, the magnetic susceptibility, magnetization and electrical resistivity measurements have been performed along the principal axes. From these measurements, it is found that CePtGe₂ orders ferromagnetically below T_C=5.1 K, and the magnetic easy-axis corresponds to the a-axis. The anisotropic properties have been analyzed on the basis of the crystalline electric field model. We have also studied the pressure effect on the ferromagnetic ordering, and T_C is found to increase with increasing pressure. However, T_C smears out around 3.5 GPa and a new phase appears at higher pressures, where the transition temperature of the new phase also increases with increasing pressure.