Journal of the Physical Society of Japan
Online ISSN : 1347-4073
Print ISSN : 0031-9015
ISSN-L : 0031-9015
Pressure Induced Insulator–Metal Transition in Hexagonal BaTiO3−δ
Yukikuni AkishigeYouichi YamazakiNobuo Môri
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2004 Volume 73 Issue 5 Pages 1267-1272

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Abstract

The dc electrical resistivity ρ in the reduced hexagonal BaTiO2.98 single crystal was measured under hydrostatic pressures up to 3.1 GPa in the temperature range of 5 K to 300 K. The ρ along the hexagonal c axis is somewhat larger than that of the perpendicular direction. The ρ vs T curve changes the behavior at the temperature T0, where the hexagonal to orthorhombic phase transition takes place: it behaves as a semiconductor and a metal at temperatures below and above T0, respectively. With increasing pressure T0 decreases, and the metallic behavior dominates whole of the temperature range at pressures above pc=1.9 GPa. In the pressure-induced metallic phase, T2-dependence of resistivity appears at low temperatures. This rule suggests that electrons in the Ti 3d band of BaTiO3 are the same as electrons in a strongly correlated electron system. A band model is proposed to explain such insulator–metal transitions in SrTiO3, cubic BaTiO3, and hexagonal BaTiO3.

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© The Physical Society of Japan 2004
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