Abstract
We determine the optimal conditions for achieving strong nonlinearity in semiconductor cavities as a function of the Q factor, coupling constant g, and longitudinal (γ1) and pure transverse (γ2) damping constants. The intensity of the third-order nonlinear field becomes maximum in the strong-coupling regime near the condition γ1+2γ2=ωc⁄2Q, where ωc is the cavity-quasimode frequency. However, the most effective optical Kerr effect can be realized in the intermediate-coupling regime. Both of the nonlinearities are enhanced significantly also in the weak-coupling regime satisfying ωc⁄Q=(g2⁄γ1)[\\sqrt1+8γ1⁄(γ1+2γ2)−1], and their intensities depend only on the damping constants.
