Single Crystal Growth and Fermi Surface Property in ThRhIn₅

Abstract

We succeeded in growing a high-quality single crystal of ThRhIn₅ with the HoCoGa₅-type tetragonal crystal structure by the In-flux method. The lattice parameters, positional parameters and thermal parameters were determined from single-crystal x-ray diffraction measurements. We also measured the electrical resistivity and de Haas–van Alphen (dHvA) effect. Main dHvA branches are very similar to those of the 4f-itinerant heavy fermion superconductor CeCoIn₅, but the cyclotron effective masses are by one to two orders of magnitude smaller than those of CeCoIn₅. These Fermi surface properties are well explained by the FLAPW energy band calculations.