Observation of Half-Integer Quantum Hall Effect in Single-Layer Graphene Using Pulse Magnet

Abstract

We report on the magnetotransport measurement on a single-layer graphene in pulsed magnetic fields up to B=53 T. With either electron- or hole-type charge carriers, the Hall resistance R_H is quantized into R_H=(h⁄e²)ν⁻¹ with ν=±2, ±6, and ±10, which demonstrates the observation of a half-integer quantum Hall effect (QHE). At B=50 T, the half-integer QHE is even observed at room temperature in spite of a conventional carrier mobility μ=4000 cm² V⁻¹ s⁻¹.