Theoretical Study of Residual Resistance of Binary Alloys containing Foreign Atoms in small Concentration

Abstract

The increase of electrical resistance due to the substitutional impurities of di- or trivalent metal for monovalent metal in dilute solid solution is calculated.
In the present paper, two steps are taken as follows:
First, a modified screened Coulomb field is exactly obtained from the Thomas-Fermi equation by numerical integration, and second, for the calculation of the cross section, the method of partial wave is used, instead of the Born approximation.
The agreement of theoretical results with experiment has been greatly improved by this method in comparison with the results obtained by the use of the Born approximation.