Selenium Rectifiers with Artificial Layers of Selenides of Cadmium, Tin, Bismuth and Lead

Abstract

Artificial layers of selenides of Cd, Sn, Bi and Pb are made between the bulk Se and the counter electrode of selenium rectifiers with the method of vacuum evaporation. The d.c. and a.c. characteristics of these rectifiers are observed in order to get some informations about the actions of the barrier layer in usual selenium rectifiers. The results suggest that the roles of SnSe layer should never be neglected in the rectifying action in selenium rectifiers as well as those of CdSe layer, and the selenides of Bi and Pb seem to be undesirable materials.