Measurement of Seebeck Effect in Plastically Bent Germanium

Abstract

The changes of the thermoelectric powers and the electrical resistivities of several kinds of n-Ge and p-Ge due to plastic bending are measured in the temperature covering the transition- and intrinsic-ranges and analyzed by the theory. The value of the dislocation-acceptor level is estimated to be about 0.2 eV. The n-Ge sample near intrinsic is converted to p-type by the bending, while n-Ge with low resistivity and p-type samples show the slight effect. The difference of n-p conversion due to the deformation from the thermal conversion is discussed.