Abstract
The changes of resistivity during isothermal aging after quenching were measured in Al-0.72wt%Ag, Al-3.0wt%Ag binary alloys, Al-3.0wt%Ag-0.10wt%Ge, Al-3.0wt%Ag-0.01wt%In and Al-3.0wt%Ag-0.01wt%Sn ternary alloys and the interaction between a vacancy and an Ag atom was studied. General features of clustering in these ternary alloys were not different from those in Al-3.0wt%Ag binary alloy. Therefore, the binding energy between a vacancy and an Ag atom could be obtained by taking the ratio of time, tMt, required to reach the maximum of electrical resistivity in ternary alloys with that time, tMb, in binary alloy and using the already known binding energy between a vacancy and a second solute atom. Binding energy between a vacancy and an Ag atom was estimated to be 0.25±0.05 eV.