Magnetoresistance of Uniaxially Stressed Germanium in Impurity Band Conduction Region

Abstract

Magnetoresistance in the impurity band conduction has been measured on n- and p-type germanium. Large uniaxial stress is applied to remove the degeneracy of the conduction or valence band edge and to make the band structure simple. The magnetoresistance consists of three components: the negative anomalous magnetoresistance, the positive magnetoresistance having H² dependence, and the Shubnikov-de Haas effect. These components have anisotropies with respect to the magnetic field direction. The anisotropies and other properties of these components are discussed in terms of the parameters of the simplified conduction or valence band.