Journal of the Physical Society of Japan
Online ISSN : 1347-4073
Print ISSN : 0031-9015
ISSN-L : 0031-9015
On the Theory of Pinch Effect in Semiconductors
B. V. Paranjape
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1967 Volume 22 Issue 1 Pages 144-148

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Abstract
It is found that in some semiconductors when the electric current exceeds a critical value Ic most of the current carriers are pinched in the centre of the sample. The current carriers near the boundary are pulled towards the centre, because of the magnetic field produced by the elements of the current in the interior. Bennett has solved the steady state problem and obtained conditions necessary for the pinch. He has neglected the effect of generations and recombinations of electron hole pairs. In the present paper the properties of a steady state pinch are studied taking account of carrier generation and recombination.
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