Journal of the Physical Society of Japan
Online ISSN : 1347-4073
Print ISSN : 0031-9015
ISSN-L : 0031-9015
High Frequency Conductivity of NiO
Shigeharu KabashimaTatsuyuki Kawakubo
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1968 Volume 24 Issue 3 Pages 493-497

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Abstract

The conductivities of 1.2, 7.9 and 12.6 ppm (weight ratio) Li-substituted NiO are measured at high frequencies up to 24 GHz in the temperature range 110° to 450°K. The conductivity at high frequencies can be expressed as the sum of a temperature-dependent conductivity σ1 and a temperature-independent additive conductivity σ2. The former σ1 is independent of frequency until microwave region but the latter σ2 is strongly dependent on freqnency. The frequency dependence of σ2 can be represented by the dispersion formula for the dielectric loss due to the hopping of charge carriers around imperfections. The staying time at a lattice site is determined: τ=2.2×10−10 sec. A lack of temperature dependence of σ2 implies that the staying time τ does not depend on temperature and further that the holes are not selftrapped. The conduction mechanism in NiO is rather illustrated as something analogous to impurity conduction.

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