Determination of Hot Electron Temperature in n-Type InSb

Abstract

Precise hot electron temperature T_e was determined against electric field E for two n-InSb samples, of which exhaustion carrier concentration n_o is 1×10¹⁴ and 4×10¹⁴ cm⁻³ respectively, provided that lattice temperature T_L was at 4.2°K or below 2°K, and a transverse magnetic field B from 0 to 11.2 kG was applied. T_e(E) was obtained by comparing resistivity and Hall coefficient at high E with those at ohmic E but at high T_L. The results revealed (1) effects of various parameters (B, n_o, T_L) on T_e(E), (2) a bend of T_e at 18°K irrespective of B, n_o and T_L, (3) slow rise of T_e above 18°K, resulting in T_e∞E^2⁄7 if B=0, (4) termination of reasonable T_e at 30°K and predominance of electron-electron scattering below 30°K. Inferences are given in terms of the two-band model.