Dielectric Screening in Transition Metals

Abstract

Generalized dielectric functions for a single band model of d-electrons and a two band model of d- and conduction-electrons are obtained by the self-consistent field method and the tightly binding approximation for d-electrons in transition metals. By means of these functions, screenings of an impurity potential, namely, the effective potential and the induced charge density, are investigated. The results obtained are compared with the ones obtained by taking into account only transitions of the normal process in electronic polarization and by the Thomas-Fermi approximation. Numerical calculations for the case of an impurity in ferromagnetic nickel are carried out as an example.