Galvanomagnetic Effects in Single Crystals of Cadmium Arsenide

Abstract

N-type Cd₃As₂ single crystals are prepared by a modified sublimation method, and their galvanomagnetic properties are measured above 2 K. The Hall coefficient is constant from 2 to 300 K, and no anisotropy is observed. The Hall mobility is constant below 15 K and then decreases gradually with increasing temperature. Conduction carriers are degenerate and scattered by both ionized impurities and the acoustical lattice vibration below 300 K. The resistance increment (Δρ⁄ρ₀)₀₀₁⁰¹⁰ due to the magnetoresistance effect approaches 14 at 23,000 gauss, and not yet saturates. The longitudinal magnetoresistance coefficient M₀₀₁⁰⁰¹ is nearly equal to zero in samples with carriers of 3×10¹⁸/cm³ and does not vanish in samples with carriers of 1×10¹⁸/cm³. A simple ellipsoidal energy band is proposed for the former, and an n-germanium type band structure is proposed for the latter. The longitudinal magnetoresistance is not zero for samples with carriers of 1×10¹⁹/cm³.