Abstract
Galvanomagnetic properties of Te-doped Bi are studied by means of helicon standing wave resonance in high magnetic field up to 65 kG at 4.2 K. Magnetoresistance derived from Q-value of the resonance increases linearly with magnetic field, which is the result of the inhomogeneous distribution of ionized Te atoms. The resonant frequency of helicon shows the large quantum oscillation, the amplitude of which is about 5% of the nonoscillatory part and is independent of the carrier concentration, but depends on the linear term of the magnetoresistance. The phase of the oscillation of the resonant frequency differs from that of the oscillation of the magnetoresistance. It is found that the oscillation of the resonant frequency arises mainly from the quantum carrier transfer between heavy mass band and light mass band. The origin of the phase difference is found to be the collision broadening of Landau level. It is further found that the oscillation of the resonant frequency is enhanced by the inhomogeneous distribution of impurities.
