Injected Carrier Instability in High Electric Field

Abstract

The moving domain caused by double injection was detected in n-type Ge at high electric field. This phenomenon is closely related to the current instability observed. It was found that the period of oscillation is determined by the transit time of the density perturbation through a sample. The dependence of the oscillation frequency on current density is explained by the variation of the ambipolar drift velocity. The transit time observed is in qualitative agreement with the theoretical results calculated from the ambipolar drift velocity.