Piezoresistance and Piezo-Hall Effect in Heavily Doped n-Type Silicon

Abstract

Stress dependence of resistivity and Hall coefficient of Phosphorus doped n-type silicon in metallic impurity conduction region has been studied at three temperatures 4.2 K, 77 K and 300 K. It is shown that mobility or collision time derived from the date at 4.2 K by assuming a rigid band model decreases with increasing kinetic energy of electrons contrary to the ordinary energy dependence of mobility due to the scattering by charged impurities. This fact suggests that the charged carrier is scattered by the density fluctuation of impurities rather than by individual impurity potentials.