Abstract
The electroreflectance of CdxHg1−xTe alloys for x from 0 to 0.70 and for x=0.97 and x=1 was measured by the electrolyte technique in the range of photon energy 0.5 to 6 eV at room temperature. The E0+Δ0, E1, E1+Δ1 and E0′ transitions were investigated as a function of alloy composition. The transition energies at critical points show quadratic dependence on the alloy composition. The deviations from linearity are interpreted by using the dielectric two band method. The spin-orbit splitting Δ0 at k=0 for HgTe was measured directly as 1.08±0.02 eV at room temperature.