Non-Metal to Metal Transition in Amorphous Ge and Ge–Sn Alloys under High Pressure

Abstract

The effect of pressure on the electrical resistance of amorphous Ge and Ge–Sn alloys prepared by the evaporation onto mica substrates has been measured up to about 130 kbar. It is found that the semiconductor to metal transition occurs at pressure of 60 kbar in amorphous Ge, and this transition pressure is changed by alloying of Sn.