Longitudinal Magnetoresistance of n-InSb in the Quantum Limit

Abstract

Longitudinal magnetoresistance is measured in n-InSb crystals with carrier concentration ranging from 7.5×10¹³ to 9×10¹⁵ cm⁻³ at 4.2 K∼300 K. Magnetic fields up to 120 kOe are employed. Some samples exhibit negative magnetoresistance even at 200 K. By making use of the solution of the Boltzmann equation derived from the truncation of the infinite difference equation, the observed results can be qualitatively explained.