The Electronic Structure of p-Channel Inversion Layers of Silicon (100) M.O.S.: Many-Body Effects on Subbands

Abstract

The electronic structures of the subbands of p-channel inversion layers of silicon are calculated by including an image potential and a many-body interaction. The effects of the image potential and the many-body interaction are as large as the typical energy separation between the subbands. Optical spectra are calculated and compared with the experiment by Kamgar et al. A quantitative agreement between the theory and the experiment is obtained. Many-body effects on the quasi-particle mass are shown to be small except in a very low surface carrier concentration, and the validity of the previous results concerning cyclotron masses obtained in the Hartree approximation is confirmed.