Anomalous X-Ray Images of Imperfections in Boron-Diffused Silicon

Abstract

In X-ray topographs of boron-diffused silicon, an anomalous triple image contrast is observed for straight imperfections along the three ⟨1\bar10⟩ direction in (111) wafer. The contast is different from that of dislocation image observed by Borrmann effect of extinction effect. It is found that the imperfections are not simple 60° dislocations but the dislocations accompanied by imperfection of another type and have long range strained region besides the strain due to dislocation. It is concluded that the anomalous contrast is attributed to the dynamical diffraction effect in the strain field composed by the both imperfections.