Electron Spin Relaxation Time of Phosphorus-Doped Silicon

Abstract

The decay time of induced magnetization M_z of donor electrons is observed for (Si: P) samples having impurity concentrations 5.6×10¹⁷≤N_d≤2.7×10¹⁸ donors/ cm³ in the 1.2–4.2 K temperature range. The results show that the spin-lattice relaxation time T₁ increases with increasing donor concentration and becomes so close to the spin-spin relaxation time T₂ in the intermediate concentration region of transport phenomena.