Theoretical Studies of Disorder Scattering in Compound Semiconductor Alloys

Abstract

Disorder scattering in semiconductor alloys is studied by employing Green’s function method. As a first approximation, Yonezawa’s self-consistent Green’s function is applied to the problem. The scattering potential of the alloying atoms is determined empirically by comparing experimental and theoretical band edge shifts. Calculation with In_1−xGa_xAs case demonstrates that the present calculation gives much lower mobility than Brooks’ in a good agreement with the experiments.