Journal of the Physical Society of Japan
Online ISSN : 1347-4073
Print ISSN : 0031-9015
ISSN-L : 0031-9015
Correlation between Electrical Properties and Crystalline Environment in Pb1−xSnxTe Mixed Crystals
Masasi InoueYoshiyuki KakuHisao YagiToshiaki Tatsukawa
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1977 Volume 43 Issue 2 Pages 512-518

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Abstract
The electrical resistivity, Hall coefficient, and X-band EPR spectra have been measured over the temperature range from 300 to 77 K in the Bridgman-grown Pb1−xSnxTe (0≤x≤1) mixed crystals doped with 0.01 wt.% Mn as a probe. In accordance with a variation of the band gap with composition x, the electrical properties vary between the respective values for the two component semiconductors, but their behaviors are characterized by two regions; a Pb-rich side for x<0.3 and a Sn-rich side for x>0.4. In this mixed system alloy scattering is ineffective. With increasing x the hyperfine structure constant A of Mn2+ in the EPR spectra decreases drastically up to x=0.3∼0.4 and remains constant at higher tin composion, showing a stronger chemical affinity of Mn2+ with Sn atoms than Pb atoms. Only a limited range 0.1<x<0.4 there appear small lines due to forbidden transitions. In conclusion, the change in the electrical quantities with x is closely related with that in the chemical bonding nature in Pb1−xSnxTe.
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