Hall Effect in Silicon MOS Inversion Layers under Strong Magnetic Fields

Abstract

The channel conductance and the Hall voltage in a wide and a long rectangular samples of n-type MOS inversion layers on Si(100) surfaces are measured in a strong magnetic field of 100 kOe at 1.6 K. A method of transformation from the conductance and the Hall voltage data to the transverse conductivity σ_xx and the Hall conductivity σ_xy in arbitrary magnetic field strength based on the Hall-effect field correction are described. The conductivity σ_xx and σ_xy are compared with σ_xx measured directly in a Corbino disk sample and σ_xy predicted by the quantum transport theory and the electron mobility data. Good agreement is obtained only in the wide sample by the use of a modified Hall-effect field correction. Effects of the electrode resistance, the side edges and the sample geometry are discussed in connection to the modification of the Hall-effect field correction.