A Canting Spin Ordering Mechanism in Degenerate Antiferromagnetic Semiconductors. II. Reservoir Effect

Abstract

A canting spin ordering mechanism in degenerate antiferromagnetic semiconductors with reservoir is studied based on the same approximation as in nonreservoir case in the previous paper. By reservoir effect, some modifications appear remarkably at the carrier concentrations near the antiferro(AF)-cant transition, where the ferromagnetic component M_z in the canting region becomes temperature dependent and the AF-cant-ferro or the cant-AF transition occurs with increasing temperature. With increasing the carrier concentration, however, the qualitative behaviour in non reservoir case is nearly conserved, that is, M_z in the canting region is nearly temperature independent and thus the cant-ferrotransition occurs with increasing temperature. Some comparisons with experiments are given for TbCu_1−xZn_x, Fe(Pd_xPt_1−x)₃ and MnB₂.