1980 Volume 49 Issue 1 Pages 250-255
The electrical resistivity and the Hall resistivity in polycrystalline specimens of RAg1−xInx have been measured from 4.2 K to room temperature and the paramagnetic region up to room temperature, respectively. The spin disorder resistivity at 0 K, ρm(0), takes a maximum near the boundary of the different magnetic structures in each compound system, and that above the Curie temperature, ρm(∞), increases with x in Gd system, while it takes a maximum around x=0.3 in Tb and Dy systems. The ordinary Hall coefficient, R0, is positive for all the compounds. On the other hand, the spontaneous Hall coefficient, Rs, is negative for all the compounds except GdAg and TbAg and its magnitude increases with x for x≥0.1 in all the systems. The results have been discussed on the basis of the localized spin model.
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