Journal of the Physical Society of Japan
Online ISSN : 1347-4073
Print ISSN : 0031-9015
ISSN-L : 0031-9015
Structural Phase Transitions and Semiconductor-Metal Transition in WO3
Toshikazu Hirose
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1980 Volume 49 Issue 2 Pages 562-568

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Abstract
Semiconducting WO3 with the donor electrons trapped in oxygen vacancies shows so-called ‘semiconductor-metal transition’ at the triclinic-monoclinic (I) phase transition temperature at about 17°C. Resistivity discontinuities as large as a factor 102 have been observed at the monoclinic: (II)-triclinic phase transition at about −40°C.
The semiconductor-metal transition is interpreted by the consideration that the energy gap between the t2g orbitals of 5d1 conduction electrons and the donor level are enlarged by the crystalline distortions due to the condensations of the soft phonon modes. The resistivity discontinuities are interpreted as due to the different energy gaps in the monoclinic (II) and triclinic phases.
The essential difference between WO3 and ReO3 having the same crystal structure is discussed.
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