Journal of the Physical Society of Japan
Online ISSN : 1347-4073
Print ISSN : 0031-9015
ISSN-L : 0031-9015
Phonon-Limited Electron Mobility in Si(100) Inversion Layer at Low Temperatures
Yutaka Shinba, Koichi Nakamura
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1981 Volume 50 Issue 1 Pages 114-120

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Abstract
Calculation of electron mobility due to surfon scattering at temperatures 1≤T≤50 K and electron surface densities 1012≤Ns≤5×1012 cm−2 indicates, when compared with measurements by Kawaguchi and Kawaji, that the surfon scattering alone cannot explain the temperature dependent part which they extracted.
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