Photoacoustic Spectra of Semiconductors in the Strong Absorption Region

Abstract

The photoacoustic (PA) spectra in several semiconductors such as Si, Ge, InSb, GaAs, and GaP have been measured in the region of wavelength shorter than the fundamental absorption edge, where the PA signal is regarded to be independent of the absorption coefficient. We found the dips in the PA spectrain this region which can be ascribed to the optical reflection effect inherent to the band structure.