1981 Volume 50 Issue 5 Pages 1551-1554
A semiempirical relation is given between the number of electrons transferred to the empty orbits and the hyperfine constant of the doped Mn2+ ion in various compounds, on the basis of the empirical relation between the Szigeti charge and the hyperfine constant of the doped Mn2+ ion in the divalent metal compounds and of an assumption that the charge of the impurity ion is equalized to that of the host cation when the impurity replaced the host cation having the same valence as the impurity. The derived semiempirical relation is applied to a problem of the degree of the localization of the bound hole to the doped Mn2+ ion in the III V semiconductors. The bound hole is shown to be almost completely localized on the Mn orbits.
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