Hot Electron Effect in Si(111) Inversion Layer at Low Temperatures

Abstract

The rate of electron energy loss to surfons in Si(111) inversion layer is found theoretically to be given by −⟨dε⁄dt⟩=λT_e⁵ for very low lattice temperature T<<T_e<<4×[N_s⁄(10¹²cm⁻²)] K irrespective of the phonon modes, the relation being the same as the one we found previously for the (100) surface. The relation as deduced from Ono et al.’s experiment (T=10 mK, T_e\lesssim2 K, N_s=1.6×10¹³ cm⁻²) agrees well with our prediction in the T_e-dependence, but not in the value of λ.