Approximate Polarized-Orbital Calculations of Electron-Exciton Elastic Collision Cross Sections

Abstract

The cross sections for electron-exciton elastic collisions in semiconductors have been calculated by use of Hulthen’s variational method. Both the electron exchange effect and the effect of the distortion of the 1s exciton wave function have been taken into account. The collision broadening Γ of the exciton luminescence and the spin relaxation time in GaAs have been calculated and compared with experimental results.