Electron Irradiation-Induced Lattice Defects in Covalent Semiconductors: {113} Stacking Fault

Abstract

The atomic configurations and excess energies of the {113} stacking faults in covalent semiconductors have been calculated for the first time using the tight-binding type electronic theory (bond orbital model) and the Born-Mayer repulsive potential. The stability of dislocation loops produced by electron irradiation is also discussed.