Abstract
Luminescence of disordered silicide layer compound, i.e., siloxene (Si6H3(OH)3) is investigated at low temperatures. Fatigue in the luminescence is observed at 4.2 K and 77 K by prolonged irradiation of UV light. This fatigue is recovered by heating the sample at higher temperature. Inverse Arrhenius-type temperature dependence is also observed in the luminescence of siloxene. These results suggest that the electronic and structural properties of this material have a resemblance to some amorphous materials.