Effects of the Anderson Localization on Magnetoconductivity in Metallic n-GaAs

Abstract

Experimental results of magnetoconductivity in metallic n-GaAs with carrier concentration n=N_D−N_A=8.74×10¹⁶ cm⁻³ have been analyzed with the theory of the Anderson localization. It was found that the coefficient of H^1⁄2 due to the localization agrees quantitatively with the theoretical prediction by Kawabata. On the other hand, we found that the value of g₃ due to the Coulomb interaction was nearly 8 times larger than the calculated value. These results obtained in n-GaAs are markedly different from previous results obtained in n-InSb.