Journal of the Physical Society of Japan
Online ISSN : 1347-4073
Print ISSN : 0031-9015
ISSN-L : 0031-9015
Ferroelectric Domain Formation in Short Circuited KH2PO4
Eiji NakamuraSatoshi UshioKohji Abe
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1984 Volume 53 Issue 1 Pages 403-407

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Abstract
Domain configurations of short circuited KH2PO4 crystals have been observed for different formation processes with simultaneous measurements of the dielectric constant. Two types of domain configurations are obtained. One with a large dielectric constant, which contains many fine domains, is obtained by cooling from the paraelectric phase. The other with a small dielectric constant is obtained by decreasing the applied static bias field to zero. Contrary to the widely accepted idea, the ferroelectric domain is formed easily in the absence of the electrostatic depolarization field. A model based upon the spinodal decomposition is proposed to elucidate the domain formation process of the short circuited crystal.
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