Abstract
It is concluded that magnitude of electron-phonon-interaction can be estimated by the measurement of the differential conductance of inelastic tunneling current. Electron-phonon-interaction coefficient can be obtained from the jump in dI⁄dV for semiconductors with various Fermi voltage VF. For the experiments of In-SrTiO3−x contact, it has been observed that electron-phonon-interaction coefficient for the highest LO-mode is 2.5 times larger than that for the second highest LO-mode.