Metal-Insulator Transition in Disordered Copper without and with Magnetic Impurities

Abstract

The conductivity σ_LT of disordered copper films without and with magnetic impurities was measured at low temperature in order to study the metal-insulator transition. In both films, a continuous transition was observed with the increase of disorder and σ_LT was fitted to a scaling form with the same exponent of unity using high temperature conductivity as a parameter. These results are discussed along the recent scaling theory for interacting electrons.