On the Deep Level in Plastically Deformed Elemental Semiconductors

Abstract

A simple model of elemental semiconductors is presented, in which certain electronic levels are isolated within the forbidden gap under the plastic deformation. The dangling bond states arise from the local topology at the edge site. The lengthening of the nearest neighbor separation at the core region is responsible for another discrete levels within the gap whereas the shortening reduces the local density of states within the band in the vicinity of the edge site. These behaviors are explained in unified version by the local change of bonding-antibonding splitting.